Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing
نویسندگان
چکیده
منابع مشابه
Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling
The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is = removed, wh...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2009
ISSN: 0021-4922,1347-4065
DOI: 10.1143/jjap.48.116505